Description
Aluminum Nitride Wafer Substrates play an essential role in the semiconductor industry. One of the key reasons for their popularity is their thermal profile, which closely matches that of silicon. This similarity makes AIN substrates an excellent choice for semiconductor applications where thermal management is critical. Innovacera, a leading provider of these substrates,offers Aluminum Nitride Wafer Substrates in various diameters, ranging from 2 inches to 8 inches, with the 6-inch and 8-inch sizes being the most commonly used.
>High Thermal Conductivity
>High Electrical Insulation
>Low Dielectric Constant
>Mechanical Strength and Stability
>Corrosion Resistance
Chemical and Thermal Stability
The substrates are particularly valued in:
>Power Electronics
>RF and Microwave Devices
>LED Manufacturing
>Wafer Bonding Technology
AlN Wafers Specification:
| Properties | Unit | 6″ Wafer | 8″ Wafer |
| Material | – | AlN Ceramics | AlN Ceramics |
| Thermal Conductivity | W/m·K | >170 | >170 |
| Thermal Expansion Coefficient | ppm/K（300~1200K） | 4-6 | 4-6 |
| Sintering Aid | – | Y2O3 | Y2O3 |
| Diameter | mm | 150+/-0.25 | 200+/-0.25 |
| Notch Depth | mm | 1.0+0.25/-0/Locating Edge | 1.0+0.25/-0 |
| Notch Angle | – | 90°+5/-2° | 90°+5/-2° |
| Thickness | μm | 400±15 | 400±15 |
| TTV | μm | <10 | <10 |
| BOW | μm | <±30 | <±30 |
| Warp | μm | <50 | <50 |
| Ra | nm | <50 | <50 |
Additional information
| Size | 6", 8" |
|---|---|
| Dimension | OD150*0.635mm, OD150*0.125mm, OD200*0.725mm, OD200*0.125mm |
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